The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Jun. 27, 2002
Applicant:
Inventors:
Hsin-Hui Lee, Kaohsiung, TW;
Chia-Fu Lin, Hsin-Chu, TW;
Chao-Yuan Su, Koahsiung, TW;
Yeng-Ming Chen, Hsin-Chu, TW;
Kai-Ming Chin, Taiping, TW;
Li-Chi Chen, Taipei, TW;
Hao-Chih Tien, Hsin-Chu, TW;
Assignee:
Taiwan SEmiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 3/102 ; B23K 3/538 ; B23K 3/512 ;
U.S. Cl.
CPC ...
B23K 3/102 ; B23K 3/538 ; B23K 3/512 ;
Abstract
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF , SF , and H and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.