The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Dec. 03, 2001
Chie-Ming Yang, Hsin-Chu, TW;
Hui-Chi Lin, Hsin Chu, TW;
Jun-Yang Lai, Ping-Tung, TW;
Jiann-Liang Liou, Hsinchu, TW;
Cheng-Yeh Shih, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method is provided for treating the surface of a layer of passivation where this layer of passivation comprises silicon dioxide or silicon nitride. An oxygen rich layer is created over the surface of the layer of passivation. Under the first embodiment of the invention a layer of silicon oxide is deposited over the surface of a substrate, a layer of plasma enhanced silicon nitride is deposited over the surface of the layer of silicon oxide, and a layer of oxynitride is deposited over the surface of the layer of plasma enhanced silicon nitride. Under the second embodiment of the invention a layer of silicon oxide is deposited over the surface of a substrate, a layer of silicon nitride is deposited over the surface of layer of silicon oxide. The surface of the layer of silicon nitride is oxidized by N O or O plasma treatment.