The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2002

Filed:

Jun. 23, 2000
Applicant:
Inventors:

Marie Angelopoulos, Cortlandt Manor, NY (US);

Ari Aviram, Croton-on-Hudson, NY (US);

C. Richard Guarnieri, Somers, NY (US);

Wu-Song Huang, Poughkeepsie, NY (US);

Ranee Kwong, Wappingers Falls, NY (US);

Robert N. Lang, Pleasant Valley, NY (US);

Arpan P. Mahorowala, White Plains, NY (US);

David R. Medeiros, Ossining, NY (US);

Wayne M. Moreau, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 ;
U.S. Cl.
CPC ...
G03F 7/004 ;
Abstract

The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.


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