The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Apr. 12, 1999
Applicant:
Inventors:
Chong Wee Lim, J.B., MY;
Eng Hua Lim, Singapore, SG;
Kin Leong Pey, Singapore, SG;
Soh Yun Siah, Singapore, SG;
Chun Hui Low, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/1336 ;
Abstract
A new method is established to form different silicide layers over the top of the gate electrode and the surface of the source/drain regions. A thin layer of TiSi,is formed over the source/drain regions by depositing a layer of titanium and annealing this layer with the silicon substrate. The gate electrode is created as a recessed electrode, in the top recession of the electrode a layer of CoSi,is formed by depositing a layer of cobalt over the gate electrode. This layer of COSi,serves as the electrical gate contact point.