The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jan. 28, 2022
Applicant:
Nova Ltd., Rehovot, IL;
Inventors:
Gilad Barak, Rehovot, IL;
Amir Sagiv, Rehovot, IL;
Yishai Schreiber, Rehovot, IL;
Jacob Ofek, Rehovot, IL;
Zvi Gorohovsky, Rehovot, IL;
Daphna Peimer, Rehovot, IL;
Assignee:
NOVA LTD., Rehovot, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/956 (2006.01); G03F 7/00 (2006.01); H10P 74/20 (2026.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01N 21/95607 (2013.01); G03F 7/70625 (2013.01); G03F 7/7065 (2013.01); G03F 7/706831 (2023.05); G03F 7/706833 (2023.05); G03F 7/706841 (2023.05); H10P 74/203 (2026.01);
Abstract
A semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting a relevant and irrelevant portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the relevant portion of the time-domain representation.