Rehovot, Israel

Zvi Gorohovsky

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Nova Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zvi Gorohovsky. Retrieved from https://idiyas.com/inventor/zvi-gorohovsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Zvi Gorohovsky: Innovator in Semiconductor Metrology

Introduction

Zvi Gorohovsky is a prominent inventor based in Rehovot, Israel. He has made significant contributions to the field of semiconductor device metrology. His innovative work focuses on enhancing the accuracy and efficiency of optical measurements in semiconductor manufacturing.

Latest Patents

Zvi Gorohovsky holds a patent for "Time-domain optical metrology and inspection of semiconductor devices." This patent involves creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device. The process includes selecting relevant and irrelevant portions of the time-domain representation and determining measurements of parameters of interest through model-based processing.

Career Highlights

Zvi Gorohovsky is associated with Nova Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing metrology techniques that are crucial for the development of modern semiconductor devices.

Collaborations

Zvi collaborates with notable colleagues such as Gilad Barak and Amir Sagiv. Their combined efforts contribute to the innovative projects at Nova Corporation, enhancing the company's capabilities in semiconductor metrology.

Conclusion

Zvi Gorohovsky's contributions to semiconductor metrology exemplify the importance of innovation in technology. His patent and collaborative efforts continue to influence the field significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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