The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiang-Ku Shen, Hsinchu City, TW;
Jin-Mu Yin, Kaohsiung City, TW;
Tsung-Chieh Hsiao, Shetou Township, Changhua County, TW;
Chia-Lin Chuang, Taoyuan City, TW;
Li-Zhen Yu, New Taipei City, TW;
Dian-Hau Chen, Hsinchu, TW;
Shih-Wei Wang, Hsinchu, TW;
De-Wei Yu, Ping-tung, TW;
Chien-Hao Chen, Chuangwei Township, Ilan County, TW;
Bo-Cyuan Lu, New Taipei City, TW;
Jr-Hung Li, Zhubei City, TW;
Chi-On Chui, Hsinchu City, TW;
Min-Hsiu Hung, Tainan City, TW;
Hung-Yi Huang, Hsin-chu City, TW;
Chun-Cheng Chou, Taichung City, TW;
Ying-Liang Chuang, Zhubei City, TW;
Yen-Chun Huang, New Taipei City, TW;
Chih-Tang Peng, Zhubei City, TW;
Cheng-PO Chau, Tainan City, TW;
Yen-Ming Chen, Zhubei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a fin spacer alongside a fin structure, a source/drain structure over the fin structure, and a salicide layer along a surface of the source/drain structure. A bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a capping layer over the salicide layer. A portion of the capping layer directly below the bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a dielectric layer over the capping layer. The dielectric layer is made of a different material than the capping layer.