The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Mar. 08, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Pin-Wen Chen, Keelung, TW;
Chia-Han Lai, Zhubei, TW;
Chih-Wei Chang, Hsinchu, TW;
Mei-Hui Fu, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Wei-Jung Lin, Hsinchu, TW;
Yu-Shih Wang, Tainan, TW;
Ya-Yi Cheng, Taichung, TW;
I-Li Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.