Mei-Hui Fu

This inventor holds 13 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mei-Hui Fu. Retrieved from https://idiyas.com/inventor/mei-hui-fu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 13 (Patent Applications = 1)

% Patents Active = 76.9

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 515(Granted Patents)

Location History:

Hsin, TW (2017)
Hsin-Chu, TW (2016 - 2022)

Company Filing History:

13 out of 42,965

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12635497 - Semiconductor arrangement and method for making (2026-05-19),

2. 12482705 - Conductive feature formation and structure using bottom-up filling deposition (2025-11-25),

3. 11532503 - Conductive feature structure including a blocking region (2022-12-20),

4. 11482495 - Semiconductor arrangement and method for making (2022-10-25),

5. 10943823 - Conductive feature formation and structure using bottom-up filling deposition (2021-03-09),

6. 10847411 - Conductive feature formation and structure (2020-11-24),

7. 10804140 - Interconnect formation and structure (2020-10-13),

8. 10756017 - Contact structure and method of forming (2020-08-25),

9. 10475702 - Conductive feature formation and structure using bottom-up filling deposition (2019-11-12),

10. 10269713 - Contact structure and method of forming (2019-04-23),

11. 9831183 - Contact structure and method of forming (2017-11-28),

12. 9589892 - Interconnect structure and method of forming the same (2017-03-07),

13. 9385080 - Interconnect structure and method of forming the same (2016-07-05),

Certainly! Here is the article about inventor Mei-Hui Fu:

Title: Mei-Hui Fu: A Visionary Inventor Pushing the Boundaries of Technology

Introduction:

Mei-Hui Fu, a renowned inventor based in Hsinchu, Taiwan, is celebrated for his relentless pursuit of innovation and his profound impact on the field of technology. With a total of 11 patents to his name, Mei-Hui Fu's inventive spirit continues to inspire and shape the future of technological advancements.

Latest Patents:

Mei-Hui Fu's latest patents showcase his expertise in cutting-edge technologies. One of his recent inventions includes a "Conductive Feature Structure Including a Blocking Region," which focuses on enhancing conductive features like metal contacts, vias, and lines in semiconductor devices. Another notable patent is the "Semiconductor Arrangement and Method for Making," which details a method for fabricating semiconductor arrangements with precision and efficiency.

Career Highlights:

Throughout his illustrious career, Mei-Hui Fu has demonstrated a keen commitment to driving technological advancements. His work at Taiwan Semiconductor Manufacturing Company Ltd. has been instrumental in shaping the semiconductor industry and paving the way for future innovations. Mei-Hui Fu's dedication to excellence and his pioneering spirit have earned him a reputation as a visionary inventor in the tech world.

Collaborations:

Mei-Hui Fu's innovative endeavors have been further enriched through collaborations with esteemed colleagues such as Pin-Wen Chen and Yu-Hung Lin. Together, they have worked on cutting-edge projects and pushed the boundaries of technological possibilities, setting new standards in the industry.

Conclusion:

In conclusion, Mei-Hui Fu stands as a beacon of innovation and a driving force in the realm of technology. His unwavering passion for pushing the limits of what is possible has not only cemented his legacy as a visionary inventor but has also inspired a new generation of innovators to dream big and shape the future. As Mei-Hui Fu continues to make strides in the world of technology, his impact will undoubtedly be felt for years to come.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: