The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Jul. 15, 2022
Semes Co., Ltd., Chungcheongnam-do, KR;
Young Eun Jeon, Ulsan, KR;
Yun Sang Kim, Gyeonggi-do, KR;
Min Sung Jeon, Gyeonggi-do, KR;
Ji Heon Kim, Gyeonggi-do, KR;
Youngjo Jin, Gyeonggi-do, KR;
Jin Hee Hong, Gyeonggi-do, KR;
Sung Min Choi, Gyeonggi-do, KR;
Dong Young Jang, Gyeonggi-do, KR;
SEMES CO., LTD., Chungcheongnam-do, KR;
Abstract
A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.