Gyeonggi-do, South Korea

Ji Heon Kim

USPTO Granted Patents = 1 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations by Ji Heon Kim in Substrate Processing

Introduction

Ji Heon Kim is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of substrate processing, particularly in the area of atomic layer etching. His innovative approach aims to enhance the stability and efficiency of substrate processing methods.

Latest Patents

Ji Heon Kim holds a patent for an "Apparatus and method for processing substrate." This invention provides a substrate processing method capable of stably performing atomic layer etching without damaging a process chamber. The method involves several steps, including providing a substrate with a target layer in a chamber, forming a first plasma using a chlorine-containing gas to reform the target layer, and subsequently forming a second plasma with an oxygen-containing gas to further reform the target layer. The process allows for the removal of portions of the target layer by repeating the plasma formation and precursor provision steps. He has 1 patent to his name.

Career Highlights

Ji Heon Kim has established himself as a key figure in his field through his innovative work at Semes Co., Ltd. His expertise in substrate processing has contributed to advancements in technology and manufacturing processes.

Collaborations

He has collaborated with notable colleagues, including Young Eun Jeon and Yun Sang Kim, to further enhance the research and development efforts within his company.

Conclusion

Ji Heon Kim's contributions to substrate processing demonstrate his commitment to innovation and excellence in technology. His work continues to influence the industry and pave the way for future advancements.

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