Semes Co., Ltd.

Ji Heon Kim

Sung Min Choi

Yun Sang Kim

Young Eun Jeon

Jin Hee Hong

Min Sung Jeon

Youngjo Jin

Dong Young Jang

A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

Apparatus and method for processing substrate

Growing community of inventors

Gyeonggi-do, South Korea

Ji Heon Kim