The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Mar. 21, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tzu-Sung Huang, Tainan, TW;
Tsung-Hsien Chiang, Hsinchu, TW;
Ming Hung Tseng, Toufen Township, TW;
Hao-Yi Tsai, Hsinchu, TW;
Yu-Hsiang Hu, Hsinchu, TW;
Chih-Wei Lin, Zhubei, TW;
Lipu Kris Chuang, Hsinchu, TW;
Wei Lun Tsai, Kaohsiung, TW;
Kai-Ming Chiang, Hsinchu, TW;
Ching Yao Lin, Taichung, TW;
Chao-Wei Li, Hsinchu, TW;
Ching-Hua Hsieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a first metal mesh over a carrier, forming a first dielectric layer over the first metal mesh, and forming a second metal mesh over the first dielectric layer. The first metal mesh and the second metal mesh are staggered. The method further includes forming a second dielectric layer over the second metal mesh, attaching a device die over the second dielectric layer, with the device die overlapping the first metal mesh and the second metal mesh, encapsulating the device die in an encapsulant, and forming redistribution lines over and electrically connecting to the device die.