The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Apr. 11, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Zhimin Qi, Fremont, CA (US);
Yi Xu, San Jose, CA (US);
Shirish A. Pethe, Cupertino, CA (US);
Xingyao Gao, San Jose, CA (US);
Shiyu Yue, San Jose, CA (US);
Aixi Zhang, Sunnyvale, CA (US);
Wei Lei, Campbell, CA (US);
Yu Lei, Belmont, CA (US);
Geraldine Vasquez, San Jose, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Da He, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.