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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12385138 B1

PDFFull Text
Date of Patent:
Aug. 12, 2025

Filed:

Jul. 13, 2023

Plasma-enhanced deposition of film stacks

Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Jason Dirk Haverkamp, Tualatin, OR (US);

Pramod Subramonium, Beaverton, OR (US);

Joseph L. Womack, Tigard, OR (US);

Dong Niu, West Linn, OR (US);

Keith Fox, Tigard, OR (US);

John B. Alexy, West Linn, OR (US);

Patrick G. Breiling, Tigard, OR (US);

Jennifer L. Petraglia, Lake Oswego, OR (US);

Mandyam A. Sriram, San Jose, CA (US);

George Andrew Antonelli, Portland, OR (US);

Bart J. Van Schravendijk, Palo Alto, CA (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP

Primary Examiner:

Bret P Chen

Int. Cl.
CPC ...
H05H 1/24 (2006.01); C23C 16/24 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); C23C 16/509 (2006.01); C23C 16/52 (2006.01); C23C 16/54 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/50 (2013.01); C23C 16/24 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/4401 (2013.01); C23C 16/45512 (2013.01); C23C 16/45523 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/509 (2013.01); C23C 16/52 (2013.01); C23C 16/54 (2013.01); H01J 37/32137 (2013.01); H01J 37/32155 (2013.01); H01L 21/02123 (2013.01); H01L 21/02164 (2013.01); H01L 21/022 (2013.01); H01L 21/02274 (2013.01); H01L 21/6719 (2013.01); H01L 21/67201 (2013.01); H01L 21/67207 (2013.01);
Abstract

A method of depositing a film stack including films of different compositions in a process station using a plasma is described. The method includes: in a first plasma-activated film deposition phase, depositing a first film having a first film composition on a substrate, and, in a second plasma-activated deposition phase, depositing a second film having a second film composition on the first film, where the second film composition is different from the first film composition. Deposition of the first film can include delivering at least two first deposition phase reactants to the process station via a delivery line; and deposition of the second film can include delivering at least two second deposition phase reactants to the process station via the same delivery line that was used during deposition of the first film. The method may also include a step of purging the delivery line.

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