The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Oct. 28, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Toshinori Debari, Nirasaki, JP;

Reiko Sasahara, Nirasaki, JP;

Teppei Okumura, Nirasaki, JP;

Woonghyun Jeung, Nirasaki, JP;

Kenshiro Asahi, Nirasaki, JP;

Hiroyuki Abe, Nirasaki, JP;

Seungmin Kim, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0206 (2013.01); H01L 21/67069 (2013.01);
Abstract

An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.


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