Nirasaki, Japan

Hiroyuki Abe

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Abe. Retrieved from https://idiyas.com/inventor/hiroyuki-abe-icpwxses

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Hiroyuki Abe: Innovator in Etching Technology

Introduction

Hiroyuki Abe is a notable inventor based in Nirasaki, Japan. He has made significant contributions to the field of etching technology, particularly through his innovative methods and apparatus. His work has implications for various applications in semiconductor manufacturing.

Latest Patents

Hiroyuki Abe holds 1 patent for an etching method and etching apparatus. This patent describes a process that involves providing a substrate with a three-layered film composed of a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film. The etching method utilizes a HF—NH-based gas to collectively etch the three-layered film while adjusting the gas ratio in each layer within the chamber.

Career Highlights

Hiroyuki Abe is associated with Tokyo Electron Limited, a leading company in the semiconductor industry. His work at the company has allowed him to develop and refine his etching techniques, contributing to advancements in manufacturing processes.

Collaborations

Hiroyuki has collaborated with notable colleagues, including Toshinori Debari and Reiko Sasahara. These collaborations have fostered an environment of innovation and have led to further advancements in etching technology.

Conclusion

Hiroyuki Abe's contributions to etching technology exemplify the importance of innovation in the semiconductor industry. His patent and collaborative efforts continue to influence the field, showcasing the impact of dedicated inventors in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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