The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Apr. 19, 2024
Lam Research Corporation, Fremont, CA (US);
Andrew Stratton Bravo, Piedmont, CA (US);
Chih-Hsun Hsu, Cupertino, CA (US);
Serge Kosche, San Francisco, CA (US);
Stephen Whitten, Danville, CA (US);
Shih-Chung Kon, Fremont, CA (US);
Mark Kawaguchi, San Carlos, CA (US);
Himanshu Chokshi, Fremont, CA (US);
Dan Zhang, Fremont, CA (US);
Gnanamani Amburose, Fremont, CA (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.