The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Apr. 21, 2020
Applicant:

Acm Research (Shanghai), Inc., Shanghai, CN;

Inventors:

Xiaoyan Zhang, Shanghai, CN;

Wenjun Wang, Shanghai, CN;

Fuping Chen, Shanghai, CN;

Jun Wang, Shanghai, CN;

Shena Jia, Shanghai, CN;

Deyun Wang, Shanghai, CN;

Hui Wang, Shanghai, CN;

Guangyu Xia, Shanghai, CN;

He Wang, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6704 (2013.01); H01L 21/3105 (2013.01); H01L 21/67086 (2013.01);
Abstract

Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIOsolution accommodated in a DIObath; after the one or more substrates are processed in the DIObath, taking the one or more substrates out from the DIObath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIOand SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.


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