The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Nov. 24, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hsiang-Tai Lu, Hsinchu County, TW;
Shuo-Mao Chen, New Taipei, TW;
Mill-Jer Wang, Hsinchu, TW;
Feng-Cheng Hsu, New Taipei, TW;
Chao-Hsiang Yang, Hsinchu, TW;
Shin-Puu Jeng, Hsinchu, TW;
Cheng-Yi Hong, Hsinchu, TW;
Chih-Hsien Lin, Tai-Chung, TW;
Dai-Jang Chen, New Taipei, TW;
Chen-Hua Lin, Yunlin County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.