The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Aug. 07, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Hao Lai, Hsinchu, TW;
Ming-Hsun Tsai, Hsinchu, TW;
Hsin-Feng Chen, Hsinchu, TW;
Wei-Shin Cheng, Hsinchu, TW;
Yu-Kuang Sun, Hsinchu, TW;
Cheng-Hsuan Wu, Hsinchu, TW;
Yu-Fa Lo, Hsinchu, TW;
Shih-Yu Tu, Hsinchu, TW;
Jou-Hsuan Lu, Hsinchu, TW;
Shang-Chieh Chien, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Heng-Hsin Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.