The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Aug. 01, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Che Tu, Hsinchu, TW;
Wei-Chih Chen, Taipei, TW;
Sih-Hao Liao, New Taipei, TW;
Yu-Hsiang Hu, Hsinchu, TW;
Hung-Jui Kuo, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.