The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shu-Wei Li, Hsinchu, TW;

Yu-Chen Chan, Taichung, TW;

Shin-Yi Yang, New Taipei, TW;

Ming-Han Lee, Taipei, TW;

Shau-Lin Shue, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 23/53276 (2013.01);
Abstract

An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first dielectric layer and one or more first conductive features disposed in the first dielectric layer. The one or more first conductive features includes a first metal. The structure further includes a plurality of graphene layers disposed on each of the one or more first conductive features, the plurality of graphene layers include a second metal intercalated therebetween, and the second metal is different from the first metal.


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