The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jul. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Ping Chen, Hsinchu, TW;

Ming-Han Lee, Taipei, TW;

Shin-Yi Yang, New Taipei, TW;

Yung-Hsu Wu, Taipei, TW;

Chia-Tien Wu, Taichung, TW;

Shau-Lin Shue, Hsinchu, TW;

Min Cao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/76802 (2013.01); H01L 21/7684 (2013.01); H01L 21/76844 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 21/3212 (2013.01);
Abstract

Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.


Find Patent Forward Citations

Loading…