The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jun. 04, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Yip Loh, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Chun-Hsien Huang, Hsinchu, TW;
Yu-Ming Huang, Tainan, TW;
Yan-Ming Tsai, Toufen Township, TW;
Yu-Shiuan Wang, Taipei, TW;
Hung-Hsu Chen, Tainan, TW;
Yu-Kai Chen, Hsinchu, TW;
Yu-Wen Cheng, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.