The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Dec. 03, 2020
Asml Netherlands B.v., Veldhoven, NL;
Asml Holding N.v., Veldhoven, NL;
Patricius Aloysius Jacobus Tinnemans, Hapert, NL;
Igor Matheus Petronella Aarts, Port Chester, NY (US);
Kaustuve Bhattacharyya, Veldhoven, NL;
Ralph Brinkhof, Vught, NL;
Leendert Jan Karssemeijer, s Hertogenbosch, NL;
Stefan Carolus Jacobus Antonius Keij, Breda, NL;
Haico Victor Kok, Veldhoven, NL;
Simon Gijsbert Josephus Mathijssen, Rosmalen, NL;
Henricus Johannes Lambertus Megens, Waalre, NL;
Samee Ur Rehman, Milpitas, CA (US);
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.