The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

May. 31, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsiao-Lun Chang, Tainan, TW;

Chueh-Chi Kuo, Kaohsiung, TW;

Tsung-Yen Lee, Jhudong Township, Hsinchu County, TW;

Tzung-Chi Fu, Miaoli, TW;

Li-Jui Chen, Hsinchu, TW;

Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;

Che-Chang Hsu, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/40 (2012.01); G03F 1/66 (2012.01); G03F 1/24 (2012.01); G03F 1/38 (2012.01);
U.S. Cl.
CPC ...
G03F 7/2002 (2013.01); G03F 1/40 (2013.01); G03F 1/66 (2013.01); G03F 1/24 (2013.01); G03F 1/38 (2013.01);
Abstract

A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.


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