The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2024
Filed:
Mar. 10, 2021
National University Corporation Tokyo University of Agriculture and Technology, Fuchu, JP;
National Institute of Information and Communications Technology, Tokyo, JP;
Yoshiyuki Suda, Fuchu, JP;
Takahiro Tsukamoto, Fuchu, JP;
Akira Motohashi, Fuchu, JP;
Kyohei Degura, Fuchu, JP;
Katsumi Okubo, Fuchu, JP;
Takuma Yagi, Fuchu, JP;
Akifumi Kasamatsu, Koganei, JP;
Nobumitsu Hirose, Koganei, JP;
Toshiaki Matsui, Koganei, JP;
Abstract
A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t≤0.881×xwhere t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.