Fuchu, Japan

Katsumi Okubo

This inventor holds 2 USPTO granted patents. Top assignees: National Institute of Information and Communications Technology, Incorporated, Tokyo University of Agriculture and Technology. Active years: 2022-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsumi Okubo. Retrieved from https://idiyas.com/inventor/katsumi-okubo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2022-2024

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations of Katsumi Okubo in Semiconductor Technology

Introduction

Katsumi Okubo is a notable inventor based in Fuchu, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to manufacturing semiconductor laminated films.

Latest Patents

Okubo's latest patents include a manufacturing method for semiconductor laminated film and a semiconductor laminated film itself. The semiconductor laminate film consists of a silicon substrate and a semiconductor layer that contains both silicon and germanium. This semiconductor layer is characterized by a surface roughness Rms of 1 nm or less. Furthermore, it adheres to a specific relationship where t≤0.881×x, with t representing the thickness (in nm) of the semiconductor layer and x representing the ratio of germanium atoms to the total number of silicon and germanium atoms in the layer. The semiconductor layer is designed as a mixed crystal semiconductor layer, which enhances its performance.

The manufacturing method involves producing the semiconductor laminate film by forming a semiconductor layer on a silicon substrate using a sputtering method. This method specifies that the film formation temperature of the semiconductor layer should be less than 500°C, with a film formation pressure ranging from 1 mTorr to 11 mTorr. Alternatively, if the film formation temperature is less than 600°C, the pressure should be equal to or more than 2 mTorr and less than 5 mTorr. The sputtering process utilizes a sputtering gas with a hydrogen gas volume ratio of less than 0.1%, ensuring the semiconductor layer meets the thickness-to-germanium ratio relationship.

Career Highlights

Throughout his career, Katsumi Okubo has worked with esteemed institutions such as the National Institute of Information and Communications Technology and the Tokyo University of Agriculture and Technology. His work in these organizations has allowed him to advance his research and contribute to the field of semiconductor technology.

Collaborations

Okubo has collaborated with notable colleagues, including Kyohei Degura and Nobumitsu Hirose. Their joint efforts have furthered the development of innovative semiconductor solutions.

Conclusion

Katsumi Okubo's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in this field. His innovative methods and research continue to influence advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…