The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Jul. 12, 2017
National University Corporation Tokyo University of Agriculture and Technology, Fuchu, JP;
National Institute of Information and Communications Technology, Koganei, JP;
Yoshiyuki Suda, Fuchu, JP;
Takahiro Tsukamoto, Fuchu, JP;
Akira Motohashi, Fuchu, JP;
Kyohei Degura, Fuchu, JP;
Katsumi Okubo, Fuchu, JP;
Takuma Yagi, Fuchu, JP;
Akifumi Kasamatsu, Koganei, JP;
Nobumitsu Hirose, Koganei, JP;
Toshiaki Matsui, Koganei, JP;
Abstract
A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t≤0.881×x, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.