Koganei, Japan

Akifumi Kasamatsu

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignees: National Institute of Information and Communications Technology, Incorporated, Tokyo University of Agriculture and Technology. Active years: 2022-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akifumi Kasamatsu. Retrieved from https://idiyas.com/inventor/akifumi-kasamatsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2022-2024

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2 patents (USPTO):Explore Patents

Title: Akifumi Kasamatsu: Innovator in Semiconductor Technology

Introduction

Akifumi Kasamatsu is a notable inventor based in Koganei, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing semiconductor laminated films.

Latest Patents

His latest patents include a manufacturing method for semiconductor laminated film and a semiconductor laminated film itself. The semiconductor laminate film features a silicon substrate with a semiconductor layer that contains both silicon and germanium. This layer is characterized by a surface roughness Rms of 1 nm or less. Furthermore, the semiconductor layer adheres to a specific relationship where t≤0.881×x, with t representing the thickness in nanometers and x representing the ratio of germanium atoms to the total number of silicon and germanium atoms in the layer.

The manufacturing method involves producing the semiconductor laminate film by forming a semiconductor layer on a silicon substrate using a sputtering method. This method requires a film formation temperature of less than 500°C, with a pressure ranging from 1 mTorr to 11 mTorr. Alternatively, a film formation temperature of less than 600°C can be used, with a pressure of 2 mTorr to less than 5 mTorr. The sputtering process utilizes a gas mixture with less than 0.1% hydrogen gas, ensuring that the semiconductor layer meets the thickness-to-composition relationship of t≤0.881×x.

Career Highlights

Throughout his career, Akifumi Kasamatsu has worked with esteemed institutions such as the Tokyo University of Agriculture and Technology and the National Institute of Information and Communications Technology. His work has significantly advanced the understanding and application of semiconductor technologies.

Collaborations

He has collaborated with notable colleagues, including Yoshiyuki Suda and Takahiro Tsukamoto, contributing to various projects that enhance semiconductor research and development.

Conclusion

Akifumi Kasamatsu's innovative work in semiconductor technology, particularly in the development of laminated films, highlights his role as a key inventor in this field. His contributions continue to influence advancements in semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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