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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11967486 B1

PDFFull Text
Date of Patent:
Apr. 23, 2024

Filed:

Jan. 21, 2020

Substrate processing system including dual ion filter for downstream plasma

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Andrew Stratton Bravo, Piedmont, CA (US);

Chih-Hsun Hsu, Cupertino, CA (US);

Serge Kosche, San Francisco, CA (US);

Stephen Whitten, Danville, CA (US);

Shih-Chung Kon, Fremont, CA (US);

Mark Kawaguchi, San Carlos, CA (US);

Himanshu Chokshi, Fremont, CA (US);

Dan Zhang, Fremont, CA (US);

Gnanamani Amburose, Fremont, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:

Abdullah A Riyami

Assistant Examiner:

Syed M Kaiser

Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32422 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32467 (2013.01); H01J 37/32174 (2013.01);
Abstract

A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

Find Patent Forward Citations

Bravo, Andrew. (2024). Substrate processing system including dual ion filter for downstream plasma (U.S. Patent No. 11967486). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11967486

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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