The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Apr. 28, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Wei Chang, Taipei, TW;

Min-Hsiu Hung, Tainan, TW;

Chun-I Tsai, Hsinchu, TW;

Ken-Yu Chang, Hsinchu, TW;

Yi-Ying Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02068 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01);
Abstract

A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.


Find Patent Forward Citations

Chang, Cheng-Wei. (2024). Method of forming conductive feature including cleaning step (U.S. Patent No. 11955329). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11955329

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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