The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Jun. 26, 2020
Hitachi High-tech Corporation, Tokyo, JP;
Hiroyuki Kobayashi, Tokyo, JP;
Nobuya Miyoshi, Tokyo, JP;
Kazunori Shinoda, Tokyo, JP;
Tatehito Usui, Tokyo, JP;
Naoyuki Kofuji, Tokyo, JP;
Yutaka Kouzuma, Tokyo, JP;
Tomoyuki Watanabe, Tokyo, JP;
Kenetsu Yokogawa, Tokyo, JP;
Satoshi Sakai, Tokyo, JP;
Masaru Izawa, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.