The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Dec. 18, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Biswajeet Guha, Hillsboro, OR (US);

William Hsu, Hillsboro, OR (US);

Chung-Hsun Lin, Portland, OR (US);

Kinyip Phoa, Beaverton, OR (US);

Oleg Golonzka, Beaverton, OR (US);

Tahir Ghani, Portland, OR (US);

Kalyan Kolluru, Portland, OR (US);

Nathan Jack, Forest Grove, OR (US);

Nicholas Thomson, Hillsboro, OR (US);

Ayan Kar, Portland, OR (US);

Benjamin Orr, Munich, DE;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/785 (2013.01);
Abstract

Gate-all-around structures having devices with source/drain-to-substrate electrical contact are described. An integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first fin. A first gate stack is over the first vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures is at first and second ends of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitaxial source or drain structures is directly electrically coupled to the first fin. A second vertical arrangement of horizontal nanowires is above a second fin. A second gate stack is over the second vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures is at first and second ends of the second vertical arrangement of horizontal nanowires. Both of the second pair of epitaxial source or drain structures is electrically isolated from the second fin.


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