The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Oct. 20, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Zhiyong Wang, San Jose, CA (US);
Halbert Chong, San Jose, CA (US);
John C. Forster, Mountain View, CA (US);
Irena H. Wysok, San Jose, CA (US);
Tiefeng Shi, San Jose, CA (US);
Gang Fu, Cupertino, CA (US);
Renu Whig, Chandler, AZ (US);
Keith A Miller, Mountain View, CA (US);
Sundarapandian Ramalinga Vijayalakshmi Reddy, Bangalore, IN;
Jianxin Lei, Fremont, CA (US);
Rongjun Wang, Dublin, CA (US);
Tza-Jing Gung, San Jose, CA (US);
Kirankumar Neelasandra Savandaiah, Bangalore, IN;
Avinash Nayak, Bangalore, IN;
Lei Zhou, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.