The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
May. 13, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hsiang-Tai Lu, Hsinchu County, TW;
Shuo-Mao Chen, New Taipei, TW;
Mill-Jer Wang, Hsinchu, TW;
Feng-Cheng Hsu, New Taipei, TW;
Chao-Hsiang Yang, Hsinchu, TW;
Shin-Puu Jeng, Hsinchu, TW;
Cheng-Yi Hong, Hsinchu, TW;
Chih-Hsien Lin, Tai-Chung, TW;
Dai-Jang Chen, New Taipei, TW;
Chen-Hua Lin, Yunlin County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.