The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Jul. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Yu Chen, Taipei, TW;

Chih-Hua Chen, Hsinchu County, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Hsiu-Jen Lin, Hsinchu County, TW;

Yu-Chih Huang, Hsinchu, TW;

Yu-Peng Tsai, Taipei, TW;

Chia-Shen Cheng, Hsinchu County, TW;

Chih-Chiang Tsao, Taoyuan, TW;

Jen-Jui Yu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3114 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/568 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5389 (2013.01); H01L 24/03 (2013.01); H01L 24/09 (2013.01); H01L 24/81 (2013.01); H01L 23/3128 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/18 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/37001 (2013.01);
Abstract

A package structure includes an insulating encapsulation, at least one die, and conductive structures. The at least one die is encapsulated in the insulating encapsulation. The conductive structures are located aside of the at least one die and surrounded by the insulating encapsulation, and at least one of the conductive structures is electrically connected to the at least one die. Each of the conductive structures has a first surface, a second surface opposite to the first surface and a slant sidewall connecting the first surface and the second surface, and each of the conductive structures has a top diameter greater than a bottom diameter thereof, and wherein each of the conductive structures has a plurality of pores distributed therein.


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