The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jun. 27, 2019
Intel Corporation, Santa Clara, CA (US);
Nazila Haratipour, Hillsboro, OR (US);
I-Cheng Tung, Hillsboro, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Arnab Sen Gupta, Beaverton, OR (US);
Van Le, Beaverton, OR (US);
Matthew V. Metz, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A vertical transistor structure includes a material stack having a source material, a drain material, and a channel material therebetween. The vertical transistor structure further includes a gate electrode adjacent to a sidewall of the stack, where the sidewall includes the channel material, and at least a partial thickness of both the source material and the drain material. A gate dielectric is present between the sidewall of the stack and the gate electrode. The vertical transistor structure further includes a first metallization over a first area of the stack above the gate dielectric layer, and in contact with the gate electrode on sidewall of the stack. A second metallization is adjacent to the first metallization, where the second metallization is over a second area of the stack, and in contact with the source material or the drain material.