The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Apr. 01, 2016
Intel Corporation, Santa Clara, CA (US);
Chandra S. Mohapatra, Hillsboro, OR (US);
Glenn A. Glass, Portland, OR (US);
Harold W. Kennel, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Sean T. Ma, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An apparatus including a transistor device disposed on a surface of a circuit substrate, the device including a body including opposing sidewalls defining a width dimension and a channel material including indium, the channel material including a profile at a base thereof that promotes indium atom diffusivity changes in the channel material in a direction away from the sidewalls. A method including forming a transistor device body on a circuit substrate, the transistor device body including opposing sidewalls and including a buffer material and a channel material on the buffer material, the channel material including indium and the buffer material includes a facet that promotes indium atom diffusivity changes in the channel material in a direction away from the sidewalls; and forming a gate stack on the channel material.