The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Dec. 27, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Li-Chieh Wu, Hsinchu, TW;
Tang-Kuei Chang, Tainan, TW;
Kuo-Hsiu Wei, Tainan, TW;
Kei-Wei Chen, Tainan, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Su-Hao Liu, Jhongpu Township, TW;
Kuo-Ju Chen, Taichung, TW;
Liang-Yin Chen, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Ting-Kui Chang, New Taipei, TW;
Chia Hsuan Lee, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.