Hsinchu, Taiwan

Chia Hsuan Lee

USPTO Granted Patents = 8 

Average Co-Inventor Count = 9.3

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Hsinchu, TW (2020 - 2022)
  • Tainan, TW (2023 - 2024)

Company Filing History:


Years Active: 2020-2024

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8 patents (USPTO):

Title: Chia Hsuan Lee: Innovator in Semiconductor Technology

Introduction

Chia Hsuan Lee is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on innovative methods that enhance the performance and reliability of electronic devices.

Latest Patents

One of his latest patents is titled "Metal loss prevention using implantation." This patent provides methods for forming conductive features in a dielectric layer without the need for adhesion layers or barrier layers. The invention describes a structure comprising a dielectric layer over a substrate, with a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, which comprises an implant species. Notably, the concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface, decreasing towards the lower surface.

Career Highlights

Chia Hsuan Lee is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technologies.

Collaborations

Throughout his career, Chia has collaborated with notable colleagues, including Li-Chieh Wu and Kuo-Hsiu Wei. These collaborations have further enriched his contributions to the field.

Conclusion

Chia Hsuan Lee's innovative patents and contributions to semiconductor technology highlight his role as a leading inventor in the industry. His work continues to influence advancements in electronic device performance and reliability.

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