The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Feb. 26, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia Hsuan Lee, Hsinchu, TW;
Chun-Wei Hsu, Hsinchu, TW;
Chia-Wei Ho, Kaohsiung, TW;
Chi-Hsiang Shen, Tainan, TW;
Li-Chieh Wu, Hsinchu, TW;
Jian-Ci Lin, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
Yi-Sheng Lin, Taichung, TW;
Yang-Chun Cheng, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
Kuo-Hsiu Wei, Tainan, TW;
Kei-Wei Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.