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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11699598 B1

PDFFull Text
Date of Patent:
Jul. 11, 2023

Filed:

Dec. 14, 2020

Semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Zi-Jheng Liu, Taoyuan, TW;

Yu-Hsiang Hu, Hsinchu, TW;

Jo-Lin Lan, Kaohsiung, TW;

Sih-Hao Liao, New Taipei, TW;

Chen-Cheng Kuo, Chu-Pei, TW;

Hung-Jui Kuo, Hsinchu, TW;

Chung-Shi Liu, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Meng-Wei Chou, Zhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/568 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Find Patent Forward Citations

Liu, Zi-Jheng. (2023). Semiconductor device (U.S. Patent No. 11699598). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11699598

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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