The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Apr. 02, 2018
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Abhishek A. Sharma, Hillsboro, OR (US);
Van H. Le, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Yih Wang, Portland, OR (US);
Benjamin Chu-Kung, Portland, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/03 (2023.02); H10B 12/36 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02);
Abstract
A method is described. The method includes forming bit line structures above bitline contact structures, forming a first material on top surfaces and sidewall surfaces of the bit line structures to establish step structures for via formation, and forming a second material on the top surface of the first material. Capacitor landing structures are formed by patterning the second material.