The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Sep. 27, 2017
Intel Corporation, Santa Clara, CA (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Van H. Le, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Gilbert Dewey, Hillsoboro, OR (US);
Shriram Shivaraman, Hillsboro, OR (US);
Sean T. Ma, Portland, OR (US);
Benjamin Chu-Kung, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An embodiment includes an apparatus comprising: a substrate; a thin film transistor (TFT) comprising: source, drain, and gate contacts; a semiconductor material, comprising a channel, between the substrate and the gate contact; a gate dielectric layer between the gate contact and the channel; and an additional layer between the channel and the substrate; wherein (a)(i) the channel includes carriers selected from the group consisting of hole carriers or electron carriers, (a)(ii) the additional layer includes an insulator material that includes charged particles having a polarity equal to a polarity of the carriers. Other embodiments are described herein.