The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Mar. 18, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chi Yang, Tainan, TW;
Ssu-Yu Chen, New Taipei, TW;
Shang-Chieh Chien, New Taipei, TW;
Chieh Hsieh, Taoyuan, TW;
Tzung-Chi Fu, Miaoli, TW;
Bo-Tsun Liu, Taipei, TW;
Li-Jui Chen, Hsinchu, TW;
Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.