The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Feb. 25, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Tejinder Singh, San Jose, CA (US);
Suketu Arun Parikh, San Jose, CA (US);
Daniel Lee Diehl, Chiba, JP;
Michael Anthony Stolfi, Clifton Park, NY (US);
Jothilingam Ramalingam, Milpitas, CA (US);
Yong Cao, San Jose, CA (US);
Lifan Yan, San Jose, CA (US);
Chi-I Lang, Cupertino, CA (US);
Hoyung David Hwang, Cupertino, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.