The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Jan. 14, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Hung Lin, Taichung, TW;

Chih-Wei Wu, Yilan, TW;

Chia-Nan Yuan, Hsinchu, TW;

Ying-Ching Shih, Hsinchu, TW;

An-Jhih Su, Taoyuan, TW;

Szu-Wei Lu, Hsinchu, TW;

Ming-Shih Yeh, Hsinchu County, TW;

Der-Chyang Yeh, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 21/768 (2006.01); H01L 21/56 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/56 (2013.01); H01L 21/76898 (2013.01); H01L 23/295 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/5381 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 24/82 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/24105 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/2518 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/25174 (2013.01); H01L 2224/82101 (2013.01);
Abstract

A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, a second encapsulant and a first RDL structure. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die. The first RDL structure is disposed on the bridge die and the second encapsulant.


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