The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Aug. 19, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Cheng Chen, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Fu-Ming Huang, Shengang Township, TW;
Kei-Wei Chen, Tainan, TW;
Liang-Yin Chen, Hsinchu, TW;
Tang-Kuei Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
Wei-Wei Liang, Hsinchu, TW;
Ji Cui, Bolingbrook, IL (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.